CSTBT (III) as the next generation IGBT
CSTBT (III) as the next generation IGBT
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DOI：
10.1109/ispsd.2008.4538900
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
T. Takahashi;Y. Tomomatsu;K. Sato
中科院分区：
文献类型：
--
作者：
T. Takahashi;Y. Tomomatsu;K. Sato
Recently, the performance of Si power devices gradually approaches the physical limit, and the latest SiC device seemingly has the ability to substitute the Si insulated gate bipolar transistor (IGBT) in 1200 V class. In this paper, we demonstrate the feasibility of further improving the Si IGBT based on the new concept of CSTBTtrade. In point of view of low turn-off loss and high uniformity in device characteristics, we employ the techniques of fine-pattern and retro grade doping in the design of new device structures, resulting in significant reduction on the turn-off loss and the VGE(th) distribution, respectively.
