Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions
Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions
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DOI：
10.1063/1.125838
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发表时间：
2000-01-31
影响因子：
4
通讯作者：
Parkin, SSP
中科院分区：
文献类型：
--
作者：
Anguelouch, A;Schrag, BD;Parkin, SSP
研究了微米级磁隧道结在二维磁场中的磁开关行为。通过测量结电阻，我们获得了自由铁磁层磁化状态的信息。利用Stoner-Wohlfarth旋转模型作为起点，探讨了该层的磁性能。我们利用临界曲线的几何参数来获得自由层中层间耦合和畴结构效应的信息。(C) 2000年美国物理研究所。[s0003 - 6951(00) 00304 - 1]。
The magnetic switching behavior of micron-size magnetic tunnel junctions has been studied in two-dimensional magnetic fields. By measuring junction resistance, we obtain information about the magnetization state of the free ferromagnetic layer. Magnetic properties of this layer are explored using the Stoner-Wohlfarth rotational model as a starting point. We use geometric parameters of the critical curves to obtain information about interlayer coupling and domain structure effects in the free layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00304-1].