Effects of chemical fluctuations on microstructures and properties of multiferroic BiFeO3 thin films

Effects of chemical fluctuations on microstructures and properties of multiferroic BiFeO3 thin films
复制标题

DOI:
10.1063/1.2771089
复制
发表时间:
2007-08-20
影响因子:
4
通讯作者:
Zhang, Y.
Zhang, Y.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Luo, W. B.;Zhu, J.;Zhang, Y.

文献摘要

被引文献

相似文献

采用脉冲激光沉积法在SrTiO_3(001)衬底上生长了BiFeO_3薄膜。结果发现,氧分压是至关重要的相纯度,表面形态和表面化学。单相BFO薄膜在1 Pa O-2,而Bi 2 O3出现在薄膜中沉积在0.01 Pa的X射线衍射证实。X射线光电子能谱分析表明,在0.01Pa下制备的薄膜中存在Fe ~(2+)和金属Bi。由于在0.01 Pa下沉积的样品中存在Fe ~(2+),饱和磁化强度远大于在1 Pa下制备的样品。在单相样品中观察到具有23.6 μ C/cm(2)极化的饱和铁电电滞回线。相比之下,在0.01 Pa下沉积的薄膜表现出较差的铁电性能。
BiFeO3 films have been grown on SrTiO3 (001) substrates by pulsed laser deposition. It was found that oxygen partial pressure is crucial to phase purity, surface morphology, and surface chemistry. Single-phase BFO films were obtained at 1 Pa O-2, while Bi2O3 appeared in the films deposited at 0.01 Pa as confirmed by x-ray diffractions. It was revealed that Fe2+ and metallic Bi exist in the films fabricated at 0.01 Pa by x-ray photoelectron spectroscopy investigation. Owing to Fe2+ in the samples deposited at 0.01 Pa, the saturation magnetization is much larger than the ones fabricated at 1 Pa. A well-saturated ferroelectric hysteresis loop with a polarization of 23.6 mu C/cm(2) was observed in the single-phase samples. In contrast, the films deposited at 0.01 Pa exhibited poor ferroelectric properties.