Effective mobility for sequential carrier transport in multiple quantum well structures
Effective mobility for sequential carrier transport in multiple quantum well structures
复制标题
多量子阱结构中连续载流子传输的有效迁移率
DOI：
10.1103/physrevb.96.075441
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发表时间：
2017
影响因子：
3.7
通讯作者：
Masakazu Sugiyama
中科院分区：
文献类型：
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作者：
Kasidit Toprasertpong;Stephen M. Goodnick;Yoshiaki Nakano;Masakazu Sugiyama
我们研究了一个有效载流子迁移率的理论模型，以全面描述在外加电场作用下垂直载流子在多量子阱（MQW）结构上的输运行为。基于准热平衡近似和半经典方法，导出了热离子发射、直接隧穿和热辅助隧穿的有效迁移率的解析表达式。该模型预测的InGaAs/GaAsP MQWs的有效电子和空穴迁移率与室温下载流子飞行时间测量的实验结果吻合较好。有了这个概念，mqw内部复杂的载流子动力学可以简化为有效的迁移率，这是一个更容易处理的等效参数，可以很容易地纳入传统的漂移-扩散模型。
We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions of effective mobilities for thermionic emission, direct tunneling, and thermally assisted tunneling are derived based on the quasithermal equilibrium approximation and the semiclassical approach. Effective electron and hole mobilities in InGaAs/GaAsP MQWs predicted from our model are in good agreement with the experimental results obtained from the carrier time-of-flight measurement near room temperature. With this concept, the complicated carrier dynamics inside MQWs can be simplified to an effective mobility, an equivalent parameter that is more straightforward to handle and can be easily incorporated in the conventional drift-diffusion model.