A 13dBm 60GHz-band injection locked PA with 36% PAE in 65nm CMOS
A 13dBm 60GHz-band injection locked PA with 36% PAE in 65nm CMOS
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发表时间：
2011-12
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通讯作者：
M. Tormanen;J. Lindstrand;H. Sjoland
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作者：
M. Tormanen;J. Lindstrand;H. Sjoland
介绍了一种具有单端输入输出信号的60GHz全集成注入锁定功率放大器。PA磁芯由NMOS交叉耦合对和NMOS注入电流晶体管组成。片上变压器作为平衡器用于平衡信号转换。使用1.2V电源，PA在58GHz时的输出功率（Pout）为13dBm，功率附加效率（PAE）为36%。它采用标准的65nm LP CMOS工艺，芯片面积为0.54×0.29 mm2（包括焊盘）。
A 60GHz fully integrated injection locked power amplifier (PA) with single-ended input and output signals is demonstrated. The PA core is composed of an NMOS cross-coupled pair together with NMOS current injecting transistors. On-chip transformers are used as baluns for balanced signal conversion. Using a 1.2V supply the PA achieves an output power (Pout) of 13dBm and a power added efficiency (PAE) of 36% at 58GHz. It is implemented in a standard 65nm LP CMOS process and occupies a chip area of 0.54×0.29 mm2 including pads.