Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
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DOI：
10.1126/science.1083212
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发表时间：
2003-05-23
期刊：
影响因子：
56.9
通讯作者：
Hosono, H
中科院分区：
文献类型：
--
作者：
Nomura, K;Ohta, H;Hosono, H
我们报道了使用单晶薄膜透明氧化物半导体InGaO 3（ZnO）（5）作为电子沟道和非晶氧化铪作为栅极绝缘体的透明场效应晶体管的制造。该器件在室温下的通断电流比接近10（6），场效应迁移率接近80平方厘米/伏/秒，工作时对可见光照射不敏感。这一结果为下一代光电子学实现透明电子学迈出了一步。
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)(5), as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of similar to10(6) and a field-effect mobility of similar to80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.