Preparation of biaxially textured Ce1-x(Y0.2Zr0.8)(x)O-8 buffer layers on RABiTS NiW tapes by chemical solution deposition
Preparation of biaxially textured Ce1-x(Y0.2Zr0.8)(x)O-8 buffer layers on RABiTS NiW tapes by chemical solution deposition
复制标题
化学溶液沉积法在RABiTS NiW带上制备双向织构Ce1-x(Y0.2Zr0.8)(x)O-8缓冲层
DOI：
10.1016/j.jeurceramsoc.2018.06.037
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发表时间：
2018
影响因子：
5.7
通讯作者：
Zhang Pingxiang
中科院分区：
文献类型：
--
作者：
Lei Li;Li Limin;Wang Shasha;Zhao Gaoyang;Oshima Yoshifumi;Ren Yang;Zhao Lei;Jin Lihua;Wang Yao;Li Chengshan;Zhang Pingxiang
Highly (100)-oriented Ce1-x(Y0.2Zr0.8)xOδ(CYZO) films were prepared on biaxially textured NiW substrates by a chemical solution deposition approach using metal inorganic salts as starting materials. It has been found that both the preferential orientation and surface roughness of CYZO films decrease gradually with increasing of the doping percentage of Y3+and Zr4+ions. The epitaxial growth relationship of (220)CYZO//(200)NiWand [00 l]CYZO//[001]NiWwas demonstrated by XRD texture measurement as well as atomic resolution STEM observation. XRD, Raman and XPS spectra results indicate that Y3+and Zr4+ions were indeed introduced into CeO2lattice to substitute Ce4+ions and form cubic fluorite CYZO solid solution. Moreover, CeO2buffer layer can be endowed a strong enough capability to prevent element diffusion through co-doping of yttrium and zirconium, provided that an optimal doping ratio of them is adopted. This will provide a new approach to fabricating strong-barrier single buffer layer for coated conductor.
