Electronic-excitation-induced processing in GaSb compound nanoparticles
Electronic-excitation-induced processing in GaSb compound nanoparticles
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GaSb 化合物纳米粒子的电子激发诱导加工
DOI：
10.1155/2011/901930
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发表时间：
2011
影响因子：
--
通讯作者：
H.Mori
中科院分区：
文献类型：
--
作者：
H.Yasuda;H.Mori
通过原位透射电子显微镜研究了电子激发诱导的纳米颗粒结构变化的温度依赖性。当保持在340 K的GaSb纳米颗粒被25 keV电子激发时，随着总电子剂量的增加，化合物转变为多孔化合物或由锑核和镓壳组成的两相结构。另一方面，在GaSb纳米颗粒保持在293 K的结构仍然是原来的化合物相。有人建议， 结构变化的温度依赖性可能源于由激发非热引入的点缺陷的协同行为， 热迁移率
Temperature dependence of electronic‐excitation‐induced structural changes in nanoparticles has been studied by in situ transmission electron microscopy. When GaSb nanoparticles kept at 340 K were excited by 25 keV electrons, the compound transforms to the porous compound or the two‐phase structure consisting of an antimony core and a gallium shell with increasing the total electron dose. On the other hand, in GaSb nanoparticles kept at 293 K the structure remains the original compound phase. It is suggested that such temperature dependence of the structural changes may arise from synergetic behaviors of point defects introduced athermally by the excitation and thermal mobility.