Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates
Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates
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在邻位 GaAs(111)B 衬底上生长的全外延 MnAs/AlAs/MnAs 铁磁隧道结中的隧道磁阻
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发表时间：
2002
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通讯作者：
Masaaki Tanaka
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作者：
S. Sugahara;Masaaki Tanaka
采用分子束外延技术在邻位GaAs（111）B衬底上生长了MnAs/AlAs/MnAs磁性隧道结（MTJ）。在底部MnAs层在250 °C下生长之后，连续的AlAs隧道势垒和顶部MnAs层在200 °C的较低温度下生长，以便抑制Mn原子的表面偏析。 高分辨透射电子显微镜显示，实现了单晶MnAs/AlAs/MnAs三层异质结构与原子平坦和化学突变的接口。在由这种三层异质结构成的完全外延MTJ中，清楚地观察到了隧穿磁电阻（TMR）。在10 K时，TMR比为1.4%，随着偏压的增加和温度的升高，TMR比逐渐减小，但在室温下仍保持TMR效应。
We have fabricated fully epitaxial single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions (MTJs) grown by molecular-beam epitaxy on vicinal GaAs(111)B substrates. After the bottom MnAs layer was grown at 250 °C, the successive AlAs tunnel barrier and the top MnAs layer were grown at a lower temperature of 200 °C in order to suppress the surface segregation of Mn atoms. High-resolution transmission electron microscopy revealed that a monocrystalline MnAs/AlAs/MnAs trilayer heterostructure with atomically flat and chemically abrupt interfaces was realized. Tunneling magnetoresistance (TMR) was clearly observed in fully epitaxal MTJs made up of this trilayer heterostructure. The TMR ratio was 1.4% at 10 K and it decreased with increasing the bias voltage and with increasing temperature, but the TMR effect still remained at room temperature.