Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC
Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC
复制标题
4H-SiC 双极单片集成电路的演示和表征
DOI：
10.1109/ted.2008.926681
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发表时间：
2008
影响因子：
3.1
通讯作者：
J. Cooper
中科院分区：
文献类型：
--
作者：
Jeong;Shakti Singh;J. Cooper
首次在4 H-SiC中实现了采用晶体管-晶体管逻辑（TTL）的单片双极集成电路技术。工作在15 V电源下，SiC双极晶体管的基极-发射极电压较高，因此扇出为10的TTL反相器在室温下具有1.5 V的高电平噪声容限（NMH）和3.9 V的低电平噪声容限（NML）。还描述了所制备的SiC TTL门的瞬态响应特性。该电路在室温至300 ℃以上的温度范围内工作良好，表明SiC双极集成电路是高温应用的有希望的候选者。
A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML,) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300degC, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.