Magnetotransport properties of MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures
Magnetotransport properties of MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures
复制标题
MnAs/GaAs/MnAs铁磁体/半导体三层异质结构的磁输运特性
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
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作者：
K. Takahashi;Masaaki Tanaka
We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling.
