Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
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通过扫描隧道显微镜操作改变 Si(111) 表面的性质
DOI：
10.1143/jjap.35.l1367
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发表时间：
1996
影响因子：
1.5
通讯作者：
Y. Wada
中科院分区：
文献类型：
--
作者：
S. Heike;T. Hashizume;Satoshi Watanabe;M. Lutwyche;Y. Wada
扫描隧道显微镜(STM)被用来在针尖和Si(111)-7×7表面之间施加高电压和/或大隧道电流来形成0.2-0.6 nm深和10 nm宽的沟槽线。我们发现，一个完整的正方形沟槽包围的表面区域的表观高度比外面低0.1-0.3 nm，而在一个开口的正方形沟槽的情况下没有测量到表观高度差。我们还观察到，在完整的表面正方形沟槽内，沟槽的形成受到阻碍或使其变得困难，而在开放沟槽的情况下，这种影响可以忽略不计。
Scanning tunneling microscopy (STM) has been used to form trench lines 0.2–0.6-nm deep and 10-nm wide by applying a high voltage and/or a large tunneling current between the tip and the Si(111)-7×7 surface. We have found that the apparent height of the surface area surrounded by a complete square trench is 0.1–0.3 nm lower than the outside, while no apparent height difference is measured in the case of a square trench with one open corner. We have also observed that the trench formation is hindered or made difficult inside the complete surface square trench, while the effect is negligible in the case of the open trench.