Resonant electron transfer between quantum dots

Resonant electron transfer between quantum dots
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DOI:
10.1103/physrevb.60.8798
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发表时间:
1999-06
期刊:
影响因子:
3.7
通讯作者:
L. A. Openov
L. A. Openov
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
L. A. Openov

文献摘要

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从理论上研究了电磁场与由两个量子点组成的纳米结构的相互作用。预测了量子点局域低洼态之间的共振电子转移效应。产生这种效应的一个必要条件是存在一个激发态,其能量接近分离量子点的势垒的顶部。如果将不同量子点中电子态的叠加看作0位和1位的叠加,则可以利用这一效应实现可逆量子逻辑门NOT。
An interaction of electromagnetic field with a nanostructure composed of two quantum dots is studied theoretically. An effect of a resonant electron transfer between the localized low-lying states of quantum dots is predicted. A necessary condition for such an effect is the existence of an excited bound state whose energy lies close to the top of the barrier separating the quantum dots. This effect may be used to realize the reversible quantum logic gate NOT if the superposition of electron states in different quantum dots is viewed as the superposition of bits 0 and 1.