Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors
Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors
复制标题
DOI：
10.1109/ted.2013.2297378
复制
发表时间：
2014-01
影响因子：
3.1
通讯作者：
Guangxi Hu;Ping Xiang;Zhihao Ding;Ran Liu;Lingli Wang;T. Tang
中科院分区：
文献类型：
--
作者：
Guangxi Hu;Ping Xiang;Zhihao Ding;Ran Liu;Lingli Wang;T. Tang
本文提出了无结环栅场效应晶体管的电势、阈值电压和亚阈值摆幅的解析模型。求解泊松方程，得到了电势。利用势模型，得到了阈值电压和亚阈值摆幅的显式表达式。分析结果与模拟结果进行了比较，并观察到良好的协议。该模型不仅可用于快速电路模拟，而且可用于器件设计和优化。
Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved and the electric potential is obtained. With the potential model, explicit expressions for threshold voltage and subthreshold swing are obtained. The analytical results are compared with those from simulations and excellent agreements are observed. The analytical models are useful not only for fast circuit simulations, but also for device design and optimization.