Enhanced light-absorption and photo-sensitivity in amorphous silicon germanium/amorphous silicon multilayer
Enhanced light-absorption and photo-sensitivity in amorphous silicon germanium/amorphous silicon multilayer
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DOI：
10.1016/s0927-0248(02)00095-8
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发表时间：
2002-10-01
影响因子：
6.9
通讯作者：
Schropp, REI
中科院分区：
文献类型：
--
作者：
Jun, KH;Rath, JK;Schropp, REI
研究了在PECVD沉积工艺中，通过在恒定的SiH 4气体辉光中以固定的周期性加入GeH 4，交替引入锗，制备的a-SiGe：H/a-Si：H多层膜的特性。我们发现了增强的光吸收的多层相比，体非晶硅锗（a-SiGe：H）样品具有类似的平均纳入锗含量。我们还发现，在一定的条件下，多层膜显示。光敏性（光电导与暗电导率之比）明显增强，达到8.5 × 10（3）。我们将这些有益的效果归因于多层膜中Ge相关缺陷的减少。(C)2002 Elsevier Science B. V.保留所有权利。
We investigated the characteristics of the amorphous silicon germanium/amorphous silicon (a-SiGe:H/a-Si:H) multilayers processed through alternate germanium incorporation by adding GeH4 at a fixed periodicity to a constant gas glow of SiH4 in a PECVD deposition process. We found an enhanced optical absorption in the multilayers compared to bulk amorphous silicon germanium (a-SiGe:H) samples with similar averaged incorporated Ge contents. We also found that, in a certain condition, the multilayer shows. an obvious enhancement of the photosensitivity (photoconductivity to dark conductivity ratio) to reach a value of 8.5x10(3). We attribute these beneficial effects to the decreased Ge-related defects in the multilayer. (C) 2002 Elsevier Science B.V. All rights reserved.