Domain wall motion across microstructural features in polycrystalline ferroelectric films
Domain wall motion across microstructural features in polycrystalline ferroelectric films
复制标题
多晶铁电薄膜中微结构特征的畴壁运动
DOI：
10.1016/j.actamat.2023.118871
复制
发表时间：
2023
期刊：
影响因子：
9.4
通讯作者：
Trolier-McKinstry, Susan
中科院分区：
文献类型：
--
作者：
Hennessey, Gavin;Peters, Travis;Tipsawat, Pannawit;Checa, Marti;Collins, Liam;Trolier-McKinstry, Susan
研究了多晶SrRuO 3/SrTiO 3衬底上钙钛矿结构Pb（Zr0.52Ti0.48）O3（PZT）薄膜中晶界和三相点等微结构特征对畴壁运动钉扎的影响。集体畴壁动力学的空间变异性进行了评估，通过带激励压电响应力显微镜（BE-PFM）使用非线性映射。将非线性映射与三相点位置（如通过EBSD可视化的）并置允许探索局部微结构（例如，晶界）没有畴壁运动。结果表明，非本征行为随取向差角和晶界的接近程度而变化。单个晶界对畴壁运动的影响宽度是晶界特征的函数;随机晶界在αd/d33中表现出更深的最小值，初始和更大的影响宽度（高达905 nm），与重合位置晶格（CSL）边界（高达572 nm）相比。此外，三相点包含大量的随机边界表现出非瑞利行为，以更大的距离，这表明三相点提供了一个深的潜在的最小值或区域的畴壁运动是不利的。
This paper describes the effect of microstructural features such as grain boundaries and triple points on the pinning of domain wall motion in perovskite Pb(Zr0.52Ti0.48)O3(PZT) films on polycrystalline SrRuO3/SrTiO3substrates. Spatial variability in the collective domain wall dynamics was assessed using non-linearity mapping via Band Excitation Piezoresponse Force Microscopy (BE-PFM). Collocating the non-linearity maps with triple point locations (as visualized by EBSD) allowed for exploration of the effects that local microstructure (e.g., grain boundary) have on domain wall motion. It was found that the extrinsic behavior varied with both the misorientation angle and the proximity to the grain boundary. The width of influence of individual grain boundaries on the motion of domain walls was a function of the character of the grain boundary; random grain boundaries exhibit deeper minima in αd/d33,initialand larger widths of influence (up to 905 nm) compared to coincident site lattice (CSL) boundaries (up to 572 nm). Additionally, triple points containing larger numbers of random boundaries exhibited non-Rayleigh behavior to greater distances, suggesting that the triple point provides either a deep potential minimum or a region where domain wall motion is unfavorable.