Biexciton relaxation associated with dissociation into a surface polariton pair in semiconductor films
Biexciton relaxation associated with dissociation into a surface polariton pair in semiconductor films
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与半导体薄膜中解离成表面极化子对相关的双激子弛豫
DOI：
10.1103/physrevb.97.155303
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发表时间：
2018
影响因子：
3.7
通讯作者：
Ajiki Hiroshi
中科院分区：
文献类型：
--
作者：
Mitsumori Yasuyoshi;Matsuura Shimpei;Uchiyama Shoichi;Saito Kentarao;Edamatsu Keiichi;Nakayama Masaaki;Ajiki Hiroshi
我们研究了 6 至 200 nm 范围的 CuCl 薄膜中的双激子弛豫过程。弛豫时间通过失相时间和寿命来测量。我们观察到双激子弛豫时间的独特厚度依赖性，并且还获得了时标短至 100 fs 的超快弛豫时间，而激子寿命随着厚度的增加而单调减少。通过分析表面极化子的激子-光子耦合能量，我们从理论上计算了作为厚度函数的双激子弛豫时间。计算出的依赖性定性地再现了观察到的弛豫时间，表明双激子解离成表面极化子对是主要的双激子弛豫过程之一。
We study the biexciton relaxation process in CuCl films ranging from 6 to 200 nm. The relaxation time is measured as the dephasing time and the lifetime. We observe a unique thickness dependence of the biexciton relaxation time and also obtain an ultrafast relaxation time with a timescale as short as 100 fs, while the exciton lifetime monotonically decreases with increasing thickness. By analyzing the exciton-photon coupling energy for a surface polariton, we theoretically calculate the biexciton relaxation time as a function of the thickness. The calculated dependence qualitatively reproduces the observed relaxation time, indicating that the biexciton dissociation into a surface polariton pair is one of the major biexciton relaxation processes.