ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE
ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE
复制标题
DOI：
10.1103/physrev.114.1219
复制
发表时间：
1959-01-01
期刊：
影响因子：
--
通讯作者：
FEHER, G
中科院分区：
文献类型：
--
作者：
FEHER, G
通过电子核双共振（ENDOR）方法研究了硅中锑、磷和砷杂质的基态波函数。通过该方法获得了供体电子与位于不同晶格位置的Si 29 核的超精细相互作用。超精细相互作用的各向同性部分与 Kohn 和 Luttinger 的理论吻合度超过 50%。通过将实验结果与其理论进行比较，获得了硅中导带最小值k 0 k max=0.85±0.03。到目前为止，还没有令人满意的理论可以定量解释观察到的超精细相互作用的各向异性部分。
The ground-state wave function of the antimony, phosphorus, and arsenic impurities in silicon has been investigated by means of the electron nuclear double resonance (ENDOR) method. By this method the hyperfine interactions of the donor electron with the Si 29 nuclei situated at different lattice sites were obtained. The isotropic part of the hyperfine interaction agreed with the theory of Kohn and Luttinger to better than 50%. From a comparison of the experimental results with their theory a value for the conduction band minimum in silicon of k 0 k max= 0.85±0.03 was obtained. So far no satisfactory theory exists to account quantitatively for the observed anisotropic part of the hyperfine interaction.