Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials
Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials
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DOI：
10.1063/1.5054753
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发表时间：
2019-02-04
影响因子：
4
通讯作者：
Marshall, A. R. J.
中科院分区：
文献类型：
--
作者：
Craig, A. P.;Jain, M.;Marshall, A. R. J.
基于III-V族四元合金的扩展短波红外（SWIR）雪崩光电二极管生长在GaSb上。InGaAsSb吸收体允许的截止波长为2.2 μ m和2.75 μ m，在77 K和300 K，分别。使用Al = 0.9摩尔分数的AlGaAsSb的倍增层，最近由我们组表征的材料，允许小于15 V的击穿电压。使用BCl 3干法和HF湿法化学蚀刻制造线性和2D阵列，并对电介质钝化层进行测试。这些结果表明，扩展SWIR单光子探测器可以开发。(C)2019年作者。
Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).