Influence of Ag-doping on the performance of Cu2ZnSnS4 solar cells
Influence of Ag-doping on the performance of Cu2ZnSnS4 solar cells
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DOI：
10.1016/j.solener.2023.02.001
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发表时间：
2023-03
期刊：
影响因子：
6.7
通讯作者：
Heydar Honarvar Nazari;T. Dhakal
中科院分区：
文献类型：
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作者：
Heydar Honarvar Nazari;T. Dhakal
我们报道了Ag掺杂对Cu 2 ZnSnS 4（CZTS）太阳能电池效率的改善。所制备的CZTS太阳能电池的最高效率为5.84%，而掺银（ACZTS）电池的效率为6.66%，没有减反射涂层。通过在钼（Mo）涂覆的玻璃基板上共溅射铜、硫化锡（SnS）和硫化锌（ZnS）靶来制备前体膜。对于ACZTS，在H2S/N2环境中退火以结晶之前，在CZTS前体的顶部上热蒸发Ag的薄层（约5 nm）。两种薄膜的X射线衍射（XRD）图谱均显示为锌黄锡矿相。扫描电子显微镜（SEM）成像表明，银掺杂增加晶粒尺寸和降低孔隙率。能量色散X射线光谱（EDS）表明，ACZTS膜是能够防止一些锡损失相比，裸CZTS。电流密度-电压（J-V）测量表明ACZTS的效率提高主要是由于短路电流密度（Jsc）的增加，而开路电压（Voc）略有提高。具有Ag掺杂的太阳能电池器件还表现出较低的串联电阻和较高的分流电阻（Rsh）。拉曼光谱证实ACZTS薄膜的低串联电阻归因于抑制了MoS 2的生成。CZTS和ACZTS膜的光学带隙被测量为1.525 eV。电容-电压（C-V）测量表明，CZTS和ACZTS的内建电压（Vbi）分别为0.75 V和0.70 V。ACZTS太阳能电池的Voc更接近内建电压，表明Ag掺杂后缺陷减少。
We report an improvement in Cu2ZnSnS4(CZTS) solar cell efficiency with Ag-doping. The highest efficiency obtained for the fabricated CZTS solar cells was 5.84% and that for Ag-doped (ACZTS) cell efficiency was 6.66% without anti-reflection coating. The precursor film was prepared by co-sputtering of copper, tin sulfide (SnS), and zinc sulfide (ZnS) targets on a molybdenum (Mo) coated glass substrate. For the ACZTS, a thin layer of Ag (∼5 nm) was thermally evaporated on top of the CZTS precursor before annealing in an H2S/N2environment for crystallization. X-ray diffraction (XRD) patterns of both films showed Kesterite phase. Scanning electron microscopy (SEM) imaging showed that Ag-doping increased grain size and lowered porosity. Energy-dispersive X-ray spectroscopy (EDS) indicated that the ACZTS film was able to prevent some Sn loss compared to bare CZTS. Current Density – Voltage (J-V) measurements showed an improved efficiency for ACZTS was mostly due to increase in short-circuit current density (Jsc), while open circuit voltage (Voc) improved slightly. The solar cell device with Ag-doping also exhibited lower series resistance and higher shunt resistance (Rsh). The lower series resistance is attributed to the suppression of MoS2formation for ACZTS film, which was confirmed by Raman spectra. The optical band gaps for both CZTS and ACZTS films were measured to be 1.525 eV. Capacitance-Voltage (C-V) measurement showed that built-in voltage (Vbi) for CZTS and ACZTS were 0.75 V and 0.70 V, respectively. The Vocof the ACZTS solar cell being closer to the built-in voltage indicated reduction in defects after Ag-doping.