ATOM-RESOLVED SURFACE-CHEMISTRY USING THE SCANNING TUNNELING MICROSCOPE
ATOM-RESOLVED SURFACE-CHEMISTRY USING THE SCANNING TUNNELING MICROSCOPE
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DOI：
10.1021/j100369a011
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发表时间：
1990-03-22
影响因子：
--
通讯作者：
AVOURIS, P
中科院分区：
文献类型：
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作者：
AVOURIS, P
扫描隧道显微镜（STM）已被证明是一种强大的技术，用于研究表面和吸附层的电子形貌。在这篇文章中，我们证明了STM形貌图和原子分辨隧道光谱可以用来研究表面的化学反应性与原子分辨率，并将其与局部电子结构。通过这种方式，可以获得对影响反应性的因素的独特见解。首先，我们介绍了技术和它所基于的基本概念。然后我们详细讨论了三个具体的例子：（A）Si（100）-（2 × 1）表面上化学键的直接成像;（B）NH_3与Si（111）-（7 × 7）的择位反应;（C）硼与Si（111）的相互作用及其影响。表面电子结构，表面重建和掺杂对化学反应性的影响。最后，我们讨论了与STM针尖的电子结构有关的问题，以及STM在化学应用中可能的未来方向。
Scanning tunneling microscopy (STM) has been proven to be a powerful technique for the study of the electronic topography of surfaces and adsorbed layers. In this article, we demonstrate thatSTM topographs and atom-resolved tunneling spectra can beused to study thechemical reactivityof surfaces with atomic resolutionand relate it to the local electronic structure. In this way, a unique insight into the factors that influence reactivity can be obtained. First, we give an introduction to the technique and the basic concepts on which it is based. We then discuss in some detail three specific examples:(A) the direct imaging of chemical bonds on the Si (100)-(2X 1) surface;(B) the site-selective reaction of NH3 with Si (l 11)-(7X7); and (C) the interaction of boron with Si (l 11) andits effect. on surface electronic structure, surface reconstruction, and doping effects on chemical reactivity. We close byconsidering issues relating to therole of the electronic structure of the STM tip and possible future directions in chemical applications of the STM.