IDDQ testing of CMOS opens: an experimental study
IDDQ testing of CMOS opens: an experimental study
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CMOS 的 IDDQ 测试开启：一项实验研究
DOI：
10.1109/test.1995.529875
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
W. Weber
中科院分区：
文献类型：
--
作者：
A. Singh;H. Rasheed;W. Weber
IDDQ测试在检测CMOS电路中的短路方面是非常有效的。也有报道说，如果栅极获得足够的电压以泄漏可测量的电流，也可以检测到导致“浮动”晶体管栅极的打开缺陷。最近的实验评估了一种新的片上IDDQ传感器，表明有可能为其他类型的开放式故障提供额外的检测机制，包括开源和漏极连接。为了更详细地研究这一点，我们设计并制作了两个包含74181 ALU电路的CMOS技术测试芯片。我们的测试芯片包括一次一个地替换74181电路中的单个单元，每个单元包含一个开放缺陷的备用单元。这样，除了无故障电路外，还可以配置总共59个故障电路，每个故障电路包含不同的开路缺陷。发现使用随机向量的IDDQ测试检测了59个开放缺陷中的48个。对实验数据的分析揭示了新的机制，解释了浮栅和开放源和漏极故障的检测。
IDDQ testing is known to be very effective in detecting shorts in CMOS circuits. It has also been reported that open defects that lead to "floating" transistor gates can also be detected if the gate acquires a sufficient voltage to leak measurable current. Recent experiments evaluating a new on-chip IDDQ sensor indicated the possibility of additional detection mechanisms for other types of open failures, including open source and drain connections. To investigate this in more detail, we designed and fabricated two test chips in CMOS technology containing the 74181 ALU circuit. Our test chips include the capability of replacing, one at a time, individual cells in the 74181 circuits with back up cells that each contain a single open defect. In this way in addition to the fault free circuits, a total of 59 faulty circuits can be configured, each containing a different open defect. It was found that IDDQ testing with random vectors detected 48 of the 59 open defects. Analysis of the experimental data reveals new mechanisms that explain the detection of floating gate and open source and drain failures.