Improvement in Transfer Performance for Antireflection Structured Films with Antifouling Properties via Partial-filling Technique
Improvement in Transfer Performance for Antireflection Structured Films with Antifouling Properties via Partial-filling Technique
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通过部分填充技术提高具有防污性能的抗反射结构薄膜的传输性能
DOI：
10.2494/photopolymer.30.533
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发表时间：
2017
影响因子：
0.8
通讯作者：
J. Taniguchi
中科院分区：
文献类型：
--
作者：
Hikari Eto;S. Hiwasa;J. Taniguchi
紫外纳米压印技术（UV-NIL）是大批量制备抗反射结构（ARS）薄膜的最有效技术。但是，对于应用于手机、平板电脑等触屏设备的ARS薄膜，需要防止指纹和灰尘。因此，开发了一种具有防污性能的紫外光固化环氧树脂，用于UV-NIL。然而，由于所开发的环氧树脂具有较高的粘接强度，最终会减少纳米图案模具（如ARS）的使用寿命，因此本文中的ARS薄膜是通过部分填充技术制备的。部分填充技术使用树脂的不完全填充比，本文的工作规定了用于重复传递试验的较低和较高的填充压力。利用低压填充UV-NIL，成功制备了多达200个ARS薄膜压印，并表现出优异的性能；而得到的反射率小于0.5%。此外，通过擦拭试验和重复转移试验，分别对制备的ARS膜的防污性能和转移耐久性进行了评价。
Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For ARS films applied on touch-panel devices such as mobile phones and tablet computers, however, it is necessary to protect them from fingerprints and dust. Therefore, a UV-curable epoxy resin has been developed with antifouling properties for use with UV-NIL. However, because the developed epoxy resin possesses a high adhesive strength that ultimately reduces the lifetime of nanopatterned molds such as those for ARS, the ARS films herein were fabricated by a partial filling technique. The technique of partial filling uses an incomplete filling ratio of resin, and the work herein specifies the lower and higher filling pressures used for the repetitive transfer test. As a result, up to 200 ARS film imprints were successfully fabricated that exhibited excellent performance using lower pressure filling UV-NIL; while the reflectance obtained was less than 0.5%. In addition, the fabricated ARS films were evaluated for their antifouling properties and their transfer durability performance using the wipe test and the repeated transfer test, respectively.