Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
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DOI：
10.1002/adma.200601434
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发表时间：
2006-12-04
影响因子：
29.4
通讯作者：
Kim, Dong-Yu
中科院分区：
文献类型：
--
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
一种基于并五苯聚（α-甲基苯乙烯）栅极介电层（P α MS，见图）的有机场效应晶体管（OFET）存储器件，其具有电荷捕获能力（驻极体）。该器件具有优异的非易失性OFET存储特性，据信其来源于PaMS层中储存的电荷并从半导体转移到聚合物栅极驻极体。
An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.