NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS
NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS
复制标题
DOI：
10.1038/335137a0
复制
发表时间：
1988-09-08
期刊：
影响因子：
64.8
通讯作者：
FRIEND, RH
中科院分区：
文献类型：
--
作者：
BURROUGHES, JH;JONES, CA;FRIEND, RH
半导体器件是由聚乙炔制成的，聚乙炔是一种共轭聚合物半导体。该装置以一种新颖的方式工作：电荷存储在聚合物链的局部孤子激发中，这不是通过掺杂或光激发引入的，而是通过表面电场的存在引入的。带电孤子的形成改变了聚合物的光学性质，在带隙以下引入了光学吸收。结合聚合物的可加工性，这些新的电光效应可以在电光调制器中得到技术上的利用。
Semiconductor devices have been made from polyacetylene, a conjugated polymeric semiconductor. The device operates in a novel way: charge is stored in localized soliton-like excitations of the polymer chain, which are introduced not by doping or photoexcitation but by the presence of a surface electric field. The formation of charged solitons changes the optical properties of the polymer, introducing optical absorption below the band gap. Combined with the processibility of the polymer, these new electro-optic effects may be exploited technologically in electro-optic modulators.