Transfer ratio of the spin-valve transistor
Transfer ratio of the spin-valve transistor
复制标题
自旋阀晶体管的传输比
DOI：
10.1063/1.1480889
复制
发表时间：
2002
影响因子：
4
通讯作者：
J. Lodder
中科院分区：
文献类型：
--
作者：
O. V. Erve;R. Vlutters;P. S. Kumar;Sungdong Kim;F. Postma;R. Jansen;J. Lodder
我们描述了控制自旋阀晶体管的传输比的因素。通过系统地改变发射极和集电极肖特基势垒的高度，以及肖特基金属的高度，可以提高传输比。接下来，我们发现在某些情况下，较厚的基底会导致较高的转移率。最后，可以优化Ni 80 Fe 20 /Au/Co自旋阀基底中的磁性层的厚度，以使集电极电流的绝对变化最大。实现了24倍的总体增加，而没有损失的磁电流。
We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.