Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers
Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers
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DOI：
10.1109/ted.2021.3064790
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发表时间：
2021-05-01
影响因子：
3.1
通讯作者：
Yang, Yintang
中科院分区：
文献类型：
--
作者：
Sun, Licheng;Duan, Baoxing;Yang, Yintang
提出并研究了一种新型的快速开关SOI横向绝缘栅双极晶体管（SOI LIGBT）。提出的器件在集电极端引入基于短路阳极（SA）结构的沟槽势垒（TB），以消除骤回效应。TB结构的引入使得SA LIGBT在导通时电子电流的流动路径被压缩和延长，使得集电极p+/n结的开启先于集电极n+/n结的开启。同时，它保留了在SA LIGBT关闭时提取不平衡电子的能力。通过TCAD模拟，得到的结果表明，通过改变沟槽深度和TB结构之间的间距可以实现无骤回。与分离式SA（SSA）LIGBT相比，该LIGBT的正向压降降低了13.9%，且集电区长度大大缩短，同时保留了提取不平衡电子的能力。因此，在相同的1.49 V正向电压降下，所提出的LIGBT的关断时间和损耗比传统的（Conv.）低20.3%和21.1%。LIGBT，分别。一般而言，所提出的LIGBT的关断时间和正向电压降之间的折衷具有更好的性能。
A novel fast-switching silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is proposed and investigated in this article. The proposed device introduces trench barriers (TBs) at the collector end based on shorted anode (SA) structure to eliminate the snapback effect. The introduced TB structure can make the flow path of electron current be compressed and extended when the SA LIGBT is turned on so that the opening of collector p+/n-junction is prior to that of collector n+/n-junction. At the same time, it retains the ability to extract unbalanced electrons when the SA LIGBT is turned off. Through the TCAD simulation, the obtained results show that snapback-free can be realized by changing trench depth and pitch between TB structures. Compared with the separated SA (SSA) LIGBT, the forward voltage drop of the proposed LIGBT is reduced by 13.9% with snapback-free and much shorter collector region, which also retains the ability to extract unbalanced electrons. Thus, under the same forward voltage drop of 1.49 V, the turn-off time, and loss of the proposed LIGBT is 20.3% and 21.1% lower than those of the conventional (Conv.) LIGBT, respectively. In general, the tradeoff between turn-off time and forward voltage drop of the proposed LIGBT has much better performance.