Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
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DOI：
10.1063/1.4933182
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发表时间：
2015-10
影响因子：
3.2
通讯作者：
T. Kaizu;T. Matsumura;T. Kita
中科院分区：
文献类型：
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作者：
T. Kaizu;T. Matsumura;T. Kita
研究了GaAs覆盖温度对GaAs（001）衬底上InAs量子点形貌和光致发光（PL）特性的影响。在室温下，仅通过调节GaAs的覆盖温度，就实现了发射波长从1.1 μ m到1.3 μm的宽带调谐。随着封端温度的降低，在封端过程中由于In脱附和In-Ga混合而导致的QD收缩被抑制。这导致具有高纵横比的QD，并且结果，发射波长向长波长侧移动。此外，线偏振PL强度阐明了反映嵌入量子点的形状各向异性的各向异性特征，其中在低于460 °C的封端温度下发生偏振各向异性的显著变化。
We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.