Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film
Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film
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采用先进 (Mg,Zr) 共掺杂 AlN 薄膜的压电微型能量采集器
DOI：
10.1109/memsys.2015.7051154
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
M. Ueda
中科院分区：
文献类型：
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作者：
L. Minh;M. Hara;H. Kuwano;T. Yokoyama;T. Nishihara;M. Ueda
我们报道了一种基于新型掺杂氮化铝薄膜（Mg，Zr）AlN的微型能量采集器。通过将Mg和Zr共掺杂到AlN晶体中，（Mg，Zr）AlN展现出巨大的压电性并保持低介电常数。（Mg，Zr）AlN比传统的PZT具有更高的优值（FOM = e<sub>31</sub><sup>2</sup>/(ε<sub>0</sub>ε)）。13 at.% -（Mg，Zr）AlN的实验优值高达16.7 GPa。微加工采集器提供了3.72 mW·g<sup>-2</sup>·cm<sup>-3</sup>的高归一化功率密度。这一成果与现有技术相比提高了1.5倍。
We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e<sub>31</sub><sup>2</sup>/(ε<sub>0</sub>ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g<sup>-2</sup>.cm<sup>-3</sup>. This achievement was 1.5-fold increase compared to state of the art.