Mapping of mobile charges on insulator surfaces with the electrostatic force microscope
Mapping of mobile charges on insulator surfaces with the electrostatic force microscope
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DOI：
10.1063/1.110759
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发表时间：
1993-09
影响因子：
4
通讯作者：
K. Domanský;Y. Leng;C. C. Williams-C.;J. Janata;D. Petelenz
中科院分区：
文献类型：
--
作者：
K. Domanský;Y. Leng;C. C. Williams-C.;J. Janata;D. Petelenz
绝缘体表面上的横向场中的表面离子的迁移可修改下面的半导体结构的电特性，从而引起器件不稳定性。利用高灵敏度静电力显微镜对氮化硅表面离子的运动和空间分布进行了成像。移动的表面离子通过p-n结和开栅场效应晶体管的边缘场分布。表面电荷分布和形貌同时在微米尺度上成像。
Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p‐n junction and an open‐gate field‐effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale.