Milestones in deep reactive ion etching
Milestones in deep reactive ion etching
复制标题
深度反应离子蚀刻的里程碑
DOI：
10.1109/sensor.2005.1497272
复制
发表时间：
2005
期刊：
影响因子：
--
通讯作者：
A. Urban
中科院分区：
文献类型：
--
作者：
F. Laermer;A. Urban
深度反应离子蚀刻 (DRIE) 实际上改变了 MEMS。博世最初开发的基础技术克服了与旧湿法蚀刻技术相关的设计限制和兼容性问题。如今，经过“博世 DRIE”领域十年的发展，多种新型 MEMS 设备均采用该技术制造，并且广泛的 DRIE 设备供应商基础正在支持世界各地的客户需求。该论文讲述了从基础技术的早期发展、进入 MEMS 领域的第一步、大规模生产之路、第一个大批量产品，以及开发用于高速蚀刻、增强轮廓和均匀性控制以及抑制缺口的先进解决方案的里程碑。
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE-equipment supplier base is supporting costumer needs all over the world. The paper is telling the milestones from early development of the basic technology, the first steps into the MEMS-field, the way to mass-production, the first high-volume products, and the development of advanced solutions for high-rate etching, enhanced profile and uniformity control, and suppression of notching.