Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
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DOI：
10.1143/apex.2.111005
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发表时间：
2009-11
影响因子：
2.3
通讯作者：
S. L. Selvaraj;T. Suzue;T. Egawa
中科院分区：
文献类型：
--
作者：
S. L. Selvaraj;T. Suzue;T. Egawa
本文报道了深凹坑对生长在4英寸衬底上的AlGaN/GaN高电子迁移率晶体管（HEMT）三端截止击穿的影响。通过金属有机化学气相沉积（MOCVD）获得硅。对于具有深凹坑的器件，通过缓冲层和衬底的过量泄漏对击穿有很大影响。使用透射电子显微镜（TEM）图像确定了过度泄漏的原因。透射电镜图像显示，深坑起源于硅衬底，因为镓蚀刻硅衬底在高生长温度。这些蚀刻坑及其呈六角锥形坑形式的表面终止作用类似于微管，导致通过衬底和缓冲层的高泄漏。随着深坑密度的增加，HEMT的三端截止击穿电压迅速降低。
We report on the influence of deep pits on three terminal-off breakdown of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-in. silicon by metalorganic chemical vapor deposition (MOCVD). For devices with deep pits, the breakdown was greatly affected by excess leakage through buffer and substrate. The reason for excess leakage was established using transmission electron microscope (TEM) image. The TEM image reveals that deep pits originate from silicon substrate because of Ga etching Si substrate at high growth temperatures. These etch pits and their surface termination in the form of hexagonal pyramid pits act like micro-pipes causing high leakage through the substrate and buffer. The three terminal-off breakdown of the HEMTs decreased rapidly as the density of deep pits increase.