Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates
Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates
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DOI：
10.1002/pssr.200903072
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发表时间：
2009-05
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影响因子：
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通讯作者：
K. Shimomoto;A. Kobayashi;K. Ueno;J. Ohta;M. Oshima;H. Fujioka;H. Amanai;S. Nagao;H. Horie
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文献类型：
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作者：
K. Shimomoto;A. Kobayashi;K. Ueno;J. Ohta;M. Oshima;H. Fujioka;H. Amanai;S. Nagao;H. Horie
采用脉冲激光沉积法（PLD）在ZnO（1 $\bar 1 $00）衬底上生长了高质量m-平面In0.36Ga0.64N（1 $\bar 1 $00）薄膜，并研究了其结构特性。在室温下在ZnO衬底上生长的m面InGaN薄膜具有原子级平坦的表面，具有阶梯和台阶结构，表明薄膜生长以二维模式进行。X射线衍射测量表明m面InGaN薄膜在室温下生长时没有相分离反应。X射线入射方位垂直于c轴和a轴的薄膜的1$ \bar 1 $00 X射线摇摆曲线的半高宽值分别为88 arcsec和78 arcsec。倒易空间映射显示，50 nm厚的m面In0.36Ga0.64N薄膜在ZnO衬底上相干生长，这可能可以解释在薄膜中观察到的低缺陷密度。（© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The authors have grown high‐quality m ‐plane In0.36Ga0.64N (1$ \bar 1 $00) films on ZnO (1$ \bar 1 $00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1$ \bar 1 $00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In0.36Ga0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)