A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
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DOI：
10.1063/1.1689403
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发表时间：
2004-03-29
影响因子：
4
通讯作者：
Tanaka, M
中科院分区：
文献类型：
--
作者：
Sugahara, S;Tanaka, M
提出并理论分析了一种金属氧化物半导体场效应晶体管(MOSFET)类型的自旋晶体管(自旋MOSFET)，它由MOS结构和半金属铁磁(HMF)接触构成。当HMF源漏的磁化配置平行(反平行)时，从HMF源极注入到沟道的高度自旋极化的载流子被传输到HMF漏极(被HMF漏极阻挡)，从而产生与磁化配置相关的输出特性。我们的二维数值分析表明，自旋MOSFET在平行(反平行)磁化强度下表现出高(低)电流驱动能力，并且可以获得极大的磁电流比。此外，自旋MOSFET还满足了“自旋电子集成电路”的其他重要要求，如高放大能力、低功率延迟乘积和低截止电流。(C)2004年美国物理研究所。
We propose and theoretically analyze a metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (spin MOSFET) consisting of a MOS structure and half-metallic-ferromagnet (HMF) contacts for the source and drain. When the magnetization configuration of the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the magnetization-configuration-dependent output characteristics. Our two-dimensional numerical analysis indicates that the spin MOSFET exhibits high (low) current drive capability in the parallel (antiparallel) magnetization, and that extremely large magnetocurrent ratios can be obtained. Furthermore, the spin MOSFET satisfies other important requirements for "spintronic integrated circuits," such, as high amplification capability, low power-delay product, and low off-current. (C) 2004 American Institute of Physics.