Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10(T= Ru and Os)
Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10(T= Ru and Os)
复制标题
反铁磁近藤半导体 CeT2Al10(T= Ru 和 Os) 的点接触光谱
DOI:
10.1088/1674-1056/ab8dab
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发表时间:
2020
影响因子:
1.7
通讯作者:
Lu Xin
中科院分区:
文献类型:
--
作者:
Li Jie;Che Li-Qiang;Le Tian;Zhang Jia-Hao;Sun Pei-Jie;Takabatake Toshiro;Lu Xin
We have carried out point-contact spectroscopy (PCS) measurements on one family of antiferromagnetic Kondo semiconductor CeT 2 Al 10 (T= Ru and Os) with a Nèel temperature T N∼ 27.5 and 28.5 K, respectively. Their PCS conductance curves both exhibit a characteristic coherent double-peak-structure at temperatures below T N, signaling an AFM gap around the Fermi surface. The temperature dependent AFM gap Δ 1 follows a Bardeen–Cooper–Schrieffer (BCS)-like mean-field behavior with a moderate gap anisotropy for PCS along different crystal axes. Another asymmetric gap-like feature is observed for both compounds at temperatures far below T N, which is consistent with opening of a new hybridization gap Δ h inside the long-range ordered AFM state. Our results suggest a common itinerant nature of the anomalous AFM ordering, constraining theoretical models to explain the AFM origin in CeRu 2 Al 10 and CeOs 2 Al 10.