Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers
Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers
复制标题
铁磁 Ga 1-x Mn x As 外延层中的反铁磁 p-d 交换
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
H. Ohno
中科院分区：
文献类型：
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作者：
J. Szczytko;W. Mac;A. Twardowski;F. Matsukura;H. Ohno
用磁吸附法研究了p型${mathrm{Ga}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{As}(xl0.05)外延层的d交换作用，得到了p型外延层的磁吸收谱。考虑到高空穴浓度引起的Moss-Burstein效应，用反铁磁交换作用解释了基波吸收边的铁磁型分裂现象。
The $s,pensuremath{-}d$ exchange interaction of p-type ${mathrm{Ga}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{As} (xl0.05)$ epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic $pensuremath{-}d$ exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.