Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium
Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium
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DOI：
10.1103/physrevlett.124.047002
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发表时间：
2020-01-31
影响因子：
8.6
通讯作者：
Taguchi, Y.
中科院分区：
文献类型：
--
作者：
Kriener, M.;Sakano, M.;Taguchi, Y.
GeTe是一种化学结构简单的IV-VI族半导体材料，由于掺杂和外界刺激而具有丰富的物理性质。在这里，我们报告的超导体-半导体-超导体的过渡控制微调在掺杂。我们的研究结果揭示了存在一个临界掺杂浓度x（c）= 0.12在Ge 1-xInxTe，其中各种性质，包括结构，电阻率，载流子类型，和态密度，采取极值或改变他们的性格。同时，通过芯能级光电子能谱分析，我们发现In 3+到In 1+的价态随x的增加而发生变化，这表明该体系是一个新的有前途的研究领域，可以用来探测价态涨落及其对宿主的结构、电子和热力学性质的影响.
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration x(c) = 0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.