A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches
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DOI:
10.1088/0960-1317/26/7/074002
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发表时间:
2016-05
影响因子:
2.3
通讯作者:
Xin Guo;Z. Gong;Qi Zhong;Xiaotong Liang;Zewen Liu
Xin Guo;Z. Gong;Qi Zhong;Xiaotong Liang;Zewen Liu
中科院分区:
工程技术4区
文献类型:
--
作者:
Xin Guo;Z. Gong;Qi Zhong;Xiaotong Liang;Zewen Liu

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可重构衰减器广泛应用于微波测量仪器中。最先进的应用需要开发具有高精度和宽带性能的小型化衰减器件。本文提出了一种基于射频微机电系统(RF MEMS)开关和多晶硅衰减模块的紧凑型3位微波衰减器。该器件包括12欧姆接触MEMS开关、π型多晶硅电阻衰减模块和微波补偿结构。特别关注电阻网络、补偿结构和系统仿真的设计。该器件采用与传统集成电路制造工艺兼容的微加工工艺制造。成功制作了集成射频MEMS开关和电阻衰减模块的可重构衰减器,其尺寸为2.45×4.34×0.5 mm3,是传统步进衰减器尺寸的1/1000。测量的射频性能表明,衰减器在 0.1–20 GHz 范围内以 10 dB 间隔提供 10–70 dB 衰减,在 60 dB 时精度优于 ±1.88 dB,在 10 dB 时误差小于 2.22 dB。 3 位衰减器的每个状态的回波损耗在整个工作频段上优于 11.95 dB (VSWR < 1.71)。
Reconfigurable attenuators are widely used in microwave measurement instruments. Development of miniaturized attenuation devices with high precision and broadband performance is required for state-of-the-art applications. In this paper, a compact 3-bit microwave attenuator based on radio frequency micro-electro-mechanical system (RF MEMS) switches and polysilicon attenuation modules is presented. The device comprises 12 ohmic contact MEMS switches, π-type polysilicon resistive attenuation modules and microwave compensate structures. Special attention was paid to the design of the resistive network, compensate structures and system simulation. The device was fabricated using micromachining processes compatible with traditional integrated circuit fabrication processes. The reconfigurable attenuator integrated with RF MEMS switches and resistive attenuation modules was successfully fabricated with dimensions of 2.45 × 4.34 × 0.5 mm3, which is 1/1000th of the size of a conventional step attenuator. The measured RF performance revealed that the attenuator provides 10–70 dB attenuation at 10 dB intervals from 0.1–20 GHz with an accuracy better than ±1.88 dB at 60 dB and an error of less than 2.22 dB at 10 dB. The return loss of each state of the 3-bit attenuator was better than 11.95 dB (VSWR < 1.71) over the entire operating band.