Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
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DOI：
10.1103/physrevb.4.502
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发表时间：
1971-07
影响因子：
3.7
通讯作者：
J. Simmons;G. W. Taylor
中科院分区：
文献类型：
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作者：
J. Simmons;G. W. Taylor
导出了非平衡稳态条件下任意分布陷阱的统计量，并与单一陷阱能级的Shockley-Read表达式在形式上一致。的统计的能量依赖性进行了研究，并推导出几个有趣的功能。它已被发现适当的描述两个调制费米-狄拉克函数的陷阱的占用-一个与被困的电子，其他与被困的空穴。已经发现可以根据它们的电子和空穴捕获截面的比率将陷阱分类（到种类中）。详细讨论了电子和空穴填充的陷阱作为一个功能的能量，温度和照明强度的各种陷阱分布。浅陷阱，复合中心，和死状态之间的区别进行了详细的定义和讨论。
The statistics for an arbitrary distribution of traps under nonequilibrium steady-state conditions is derived, and it is seen to be identical in form to the Shockley-Read expression for a single trapping level. The energy dependence of the statistics has been investigated, and several interesting features have been deduced. It has been found appropriate to describe the occupancy of the traps in terms of two modulated Fermi-Dirac functions-one associated with trapped electrons, the other with trapped holes. It has been found possible to categorize the traps (into species) in terms of the ratio of their electron and hole capture cross sections. Detailed discussions are given for the electron and hole fillings of the traps as a function of energy, temperature, and illumination intensity for various trap distributions. The distinctions between shallow traps, recombination centers, and dead states are defined and discussed in detail.