Al/Al2O3/Sm2O3/SiO2/Si structure memory for nonvolatile memory application
Al/Al2O3/Sm2O3/SiO2/Si structure memory for nonvolatile memory application
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DOI：
10.1088/0268-1242/26/4/045004
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发表时间：
2011-04
影响因子：
1.9
通讯作者：
T. Pan;Fa-Hsyang Chen
中科院分区：
文献类型：
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作者：
T. Pan;Fa-Hsyang Chen
在本文中，我们提出了一种Al/Al_2O_3/Sm_2O_3/SiO_2/Si结构的存储器，使用高k Sm_2O_3膜和Al_2O_3膜作为电荷捕获层和阻挡层，分别用于非易失性存储器的应用。Al/Al_2O_3/Sm_2O_3/SiO_2/Si结构存储器在600 °C退火后，存储窗口为1.47V（在±7 V的扫描电压范围内测量）、7 V/−8 V的低编程/擦除电压（以1 ms/10 ms操作），和10.84%的小电荷损失（测量时间长达104 s，室温下）由于形成高介电常数的Sm 2 O 3俘获层和大的表面粗糙度，Al/Al_2O_3/Sm_2O_3/SiO_2/Si结构是未来先进薄膜晶体管存储器件的一个有前途的候选者。
In this paper, we propose an Al/Al2O3/Sm2O3/SiO2/Si structure memory using a high-k Sm2O3 film and Al2O3 film as a charge-trapping layer and blocking layer for nonvolatile memory application, respectively. The Al/Al2O3/Sm2O3/SiO2/Si structure memories annealed at 600 °C exhibited a large memory window of ∼4.7 V (measured at a sweep voltage range of ±7 V), a low program/erase voltage of 7 V/−8 V (operated at 1 ms/10 ms), and a small charge loss of ∼8.4% (measured time up to 104 s and at room temperature) because of the higher probability for trapping the charge carrier due to the formation of the Sm2O3 trapping layer with high dielectric constant and the large surface roughness. The Al/Al2O3/Sm2O3/SiO2/Si structure is a promising candidate for future advanced thin-film transistor memory devices.