Fast charge collection in GaAs MESFETs
Fast charge collection in GaAs MESFETs
复制标题
GaAs MESFET 中的快速电荷收集
DOI：
10.1109/23.101207
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发表时间：
1990
影响因子：
1.8
通讯作者：
A. Campbell
中科院分区：
文献类型：
--
作者：
D. McMorrow;A. Knudson;A. Campbell
时间分辨的电荷收集测量1 μ m栅长的数字GaAs金属半导体场效应晶体管（MESFETs）与各种高能离子和皮秒激光脉冲表现出上升时间短至25 ps的脉冲宽度约35 ps。有证据表明存在三个不同的时间尺度的电荷收集过程，时间常数范围从小于25 ps到>1 μ s。辐射损伤的电荷收集瞬态的影响，并使用上述带隙皮秒激光激发被证明是一个可行的替代离子激发的高频，辐射敏感的设备快速电荷沉积的动态响应的表征。>
Time-resolved charge collection measurements on 1- mu m-gate-length digital GaAs metal-semiconductor field effect transistors (MESFETs) with a variety of energetic ions and picosecond laser pulses exhibit risetimes as short as 25 ps with pulse widths of approximately 35 ps. Evidence is presented for the presence of three distinct-timescale charge collection processes, with time constants ranging from less than 25 ps to >1 mu s. The effects of radiation damage on the charge collection transients are presented, and the use of above-bandgap picosecond laser excitation is demonstrated as a viable alternative to ion excitation for characterization of the dynamical response of high-frequency, radiation-sensitive devices to rapid charge deposition. >