Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
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GaAs/AlAs 多量子阱结构中电子空穴等离子体的皮秒动力学
DOI：
10.1143/jjap.23.l427
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发表时间：
1984
影响因子：
1.5
通讯作者：
H. Saito
中科院分区：
文献类型：
--
作者：
Shosaku Tanaka;M. Kuno;A. Yamamoto;H. Kobayashi;M. Mizuta;H. Kukimoto;H. Saito
用时间分辨发光光谱方法研究了高密度电子空穴等离子体(EHP)在GaAsAlAs多量子阱结构中的皮秒时间特性。形成了载流子密度NQW为3-4×1017 cm-3的EHP，载流子引起的带隙收缩为10-20 meV。NQW的时间变化很好地解释了EHP引起的发光的时间特性。NQW的增加是由于载流子捕获，捕获时间为∼60ps，随后的NQW的减少是由于辐射复合，双分子复合系数为4.5×10-8cm3s-1。
Picosecond temporal character of high-density electron-hole plasma (EHP) in GaAs/AlAs multiple quantum well structure has been studied by means of time-resolved luminescence spectroscopy. The EHP with carrier density NQW of 3–4×1017 cm-3 is formed, where carrier induced band-gap shrinkage of 10–20 meV takes place. Temporal character of luminescence due to the EHP is well explained by time variation of NQW. Increase of NQW results from carrier trapping with trapping time of ∼60 ps, and subsequent decrease of NQW results from radiative recombination with bimolecular recombination coefficient of 4.5×10-8 cm3s-1.