Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
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DOI：
10.1021/am504837r
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发表时间：
2014-11-26
影响因子：
9.5
通讯作者：
Mikolajick, Thomas
中科院分区：
文献类型：
--
作者：
Schenk, Tony;Schroeder, Uwe;Mikolajick, Thomas
HfO2基铁电体是一种无铅的简单二元氧化物，具有非钙钛矿结构和低介电常数。他们最近才开始吸引铁电存储器和静电超级电容器领域理论小组的注意力。谐波分析的一种改进的方法，介绍了场循环行为和潜在的缺陷机制的温度依赖性的研究。激活能唤醒和疲劳提取。值得注意的是，所有值都是约100 meV，这比常规铁电体如锆钛酸铅（PZT）低1个数量级。这种差异主要是attributed到一个到两个数量级更高的电场用于循环和不同的表面之间的体积比在本研究中的10 nm薄膜和散装样品的以前的测量或模拟。此外，一个新的，类似分裂的效果，通过现场循环的开关峰值被发现，并解释了一个网络模型的基础上的电容行为的缺陷重新分布的结果。
HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.