Low-density band-gap states in pentacene thin films probed with ultrahigh-sensitivity ultraviolet photoelectron spectroscopy
Low-density band-gap states in pentacene thin films probed with ultrahigh-sensitivity ultraviolet photoelectron spectroscopy
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DOI：
10.1063/1.3258351
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发表时间：
2009-11
影响因子：
4
通讯作者：
T. Sueyoshi;H. Fukagawa;M. Ono;S. Kera;N. Ueno
中科院分区：
文献类型：
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作者：
T. Sueyoshi;H. Fukagawa;M. Ono;S. Kera;N. Ueno
我们用紫外光电子能谱技术，在无掺杂的并五苯薄膜的带隙中探测到了很低的电子态密度。差距态可能起源于不完美分子堆积区域中的最高占据分子轨道（HOMO）态，在费米能级上呈指数分布，并控制相对于HOMO带的费米能级。
We detected a very low density of electronic states in the band gap of a nondoped pentacene thin film by using ultraviolet photoelectron spectroscopy with ultrahigh sensitivity and ultralow background. The gap states, which may originate from the highest occupied molecular orbital (HOMO) state in imperfect molecular packing regions, are distributed exponentially up to the Fermi level and control the Fermi level relative to the HOMO band.