Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12−z
Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12−z
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DOI：
10.1063/1.2821364
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发表时间：
2007-12
影响因子：
3.2
通讯作者：
Wenyu Zhao;C. Dong;P. Wei;W. Guan;Lisheng Liu;P. Zhai;X. Tang;Qiang Zhang
中科院分区：
文献类型：
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作者：
Wenyu Zhao;C. Dong;P. Wei;W. Guan;Lisheng Liu;P. Zhai;X. Tang;Qiang Zhang
使用一系列标称成分为 Ba0.3−mInmCo4Sb12 (0⩽m⩽0.3) 的起始材料，通过熔融法合成了钡和铟双填充方钴矿 BaxInyCo4Sb12−z。 Rietveld结构细化表明，钡和铟都占据了方钴矿结构中的Sb-二十面体空隙。铟的热振动参数Uiso比钡大一个数量级。电子探针微量分析数据证明，铟的填充分数极限约为0.22。霍尔效应通过范德堡法在室温下测量。所有 BaxInyCo4Sb12−z 化合物均表现出 n 型传导。已在 300–850K 范围内测量了这些化合物的电导率、塞贝克系数和热导率的温度依赖性。 Ba0.13In0.14Co4Sb11.75 具有接近的钡和铟填充分数，表现出异常优异的热电性能，这可能是由于间隙占据中局域态的存在。
Barium and indium double-filled skutterudites BaxInyCo4Sb12−z have been synthesized by a melting method using a series of starting materials with nominal compositions Ba0.3−mInmCo4Sb12 (0⩽m⩽0.3). Rietveld structure refinement shows that both barium and indium occupied the Sb-icosahedron voids in skutterudite structure. The thermal vibration parameter Uiso of indium is an order of magnitude bigger than that of barium. The electron probe microanalysis data prove that the filling fraction limit of indium is about 0.22. Hall effect was measured by the Van de Pauw method at room temperature. All BaxInyCo4Sb12−z compounds exhibit n-type conduction. The temperature dependences of electrical conductivity, Seebeck coefficient, and thermal conductivity have been measured on these compounds in the range of 300–850K. Ba0.13In0.14Co4Sb11.75 with close filling fractions for barium and indium exhibits anomalously excellent thermoelectric properties, which may be due to the presence of the localized state in the gap occu...