Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
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通过基于臭氧的原子层沉积轻松封装氧化物基薄膜晶体管
DOI：
10.1002/adma.201300549
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发表时间：
2013
影响因子：
29.4
通讯作者：
T. Riedl
中科院分区：
文献类型：
--
作者：
M. Fakhri;Nikolai Babin;A. Behrendt;Timo Jakob;P. Görrn;T. Riedl
本文提出了一种简化的金属氧化物基tft封装策略，即在低温ALD工艺中使用臭氧代替水作为氧源。因此，阈值电压保持不变，迟滞永久减小。可以避免昂贵的能源和耗时的后处理过程。这一概念广泛适用于各种封装材料（如al2o3、TiO2、ZrO2）和金属氧化物通道半导体（如锌锡氧化物（ZTO）、铟镓锌氧化物（IGZO））。
A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).