AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
复制标题
蓝宝石衬底上电流增益截止频率为 152 GHz 的 AlGaN/GaN 异质结构场效应晶体管
DOI：
10.1143/jjap.44.l475
复制
发表时间：
2005
影响因子：
1.5
通讯作者：
T. Matsui
中科院分区：
文献类型：
--
作者：
M. Higashiwaki;T. Matsui
在蓝宝石衬底上制备了栅长（LG）为60-250 nm的AlGaN/GaN异质结场效应晶体管（HFET）。HFET结构通过等离子体辅助分子束外延生长，并且通过催化化学气相沉积在器件表面上形成2 nm厚的SiN膜。所有的HFET都表现出出色的直流器件性能。它们的最大漏电流密度为1.50-1.55 A/mm，非本征跨导为340-400 mS/mm。60 nm栅HFET的电流增益截止频率（fT）为152 GHz，最大振荡频率（fmax）为173 GHz。据我们所知，fT和fmax是GaN基晶体管有史以来报道的最高值。这些上级高频特性是通过使用薄且高铝含量的阻挡层、高质量催化化学气相沉积（Cat-CVD）SiN钝化和通过电子束光刻限定的亚0.1微米栅极的工艺实现的。
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a gate length (LG) of 60–250 nm were fabricated on a sapphire substrate. The HFET structure was grown by plasma-assisted molecular-beam epitaxy, and a 2-nm-thick SiN film was formed on the device surface by catalytic chemical vapor deposition. All of the HFETs showed outstanding DC device performance. They exhibited maximum drain current densities of 1.50–1.55 A/mm and extrinsic transconductances of 340–400 mS/mm. The 60-nm-gate HFET had a current gain cut-off frequency ( fT) of 152 GHz and a maximum oscillation frequency ( fmax) of 173 GHz. To our knowledge, the fT and fmax are the highest ever reported for GaN-based transistors. These superior high-frequency characteristics were achieved with a process using a thin and high-Al-content barrier layer, high-quality catalytic chemical vapor deposition (Cat-CVD) SiN passivation, and sub-0.1-µm gates defined by electron-beam lithography.