Strain and phase transformation co-mediated magnetoelectric effect in epitaxial Ni/PMN-PT (011) heterostructures
Strain and phase transformation co-mediated magnetoelectric effect in epitaxial Ni/PMN-PT (011) heterostructures
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外延 Ni/PMN-PT (011) 异质结构中应变和相变共介磁电效应
DOI：
10.1016/j.jmmm.2020.167138
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发表时间：
2020-11-15
影响因子：
2.7
通讯作者：
Zhang, Tianjin
中科院分区：
文献类型：
--
作者：
Xiang, Yuanzhi;Zhou, Peng;Zhang, Tianjin
研究了在(0 11 11)-PMN-PT单晶衬底上生长的外延Ni薄膜的磁性行为的e调谐。PMN-PT在[01-1]和[1 0 0]上分别得到环形和蝴蝶状的H-r-E和H-me-E曲线，这是由各向异性应变和非挥发性菱形到正交相变共同作用介导的。利用压电力显微镜对PMN-PT中的畴进行e调谐，利用磁力显微镜对Ni薄膜中的磁条畴进行e调谐，并通过XRD的e调谐进一步证实了上述结果。此外，在-10 kV/cm的电场下，沿[01-1]的电致H-r位移达到了1253 Oe的最大值。这项工作对磁电多功能器件的潜在应用具有重要意义。
E-tuning of magnetic behavior is investigated in epitaxial Ni film grown on (0 1 1)-PMN-PT single crystal substrate. Loop-like and butterfly-like H-r-E and H-me-E curves are obtained along [01-1] and [1 0 0], respectively, which is mediated by the combined effects of anisotropic strain and nonvolatile rhombohedral to orthorhombic phase transformation in PMN-PT. The results are further confirmed via E-tuning of domain in PMN-PT using piezoelectric force microscope and E-tuning of magnetic stripe domain in Ni film using magnetic force microscope, as well as E-tuning of XRD. In addition, the highest E-induced H-r shift of 1253 Oe is achieved along [01-1] under electric field of -10 kV/cm. This work is of significance for the potential application in magnetoelectric multifunctional devices.