Near-bandgap wavelength dependence of long-lived traveling coherent longitudinal acoustic phonons in GaSb-GaAs heterostructures
Near-bandgap wavelength dependence of long-lived traveling coherent longitudinal acoustic phonons in GaSb-GaAs heterostructures
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DOI：
10.1103/physrevb.74.113313
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发表时间：
2006-09-01
影响因子：
3.7
通讯作者：
Tolk, N.
中科院分区：
文献类型：
--
作者：
Miller, J. K.;Qi, J.;Tolk, N.
我们报告的第一个研究的长寿命振荡的光泵浦探测测量GaSb-GaAs异质结。振荡产生于光生相干纵向声学声子波，其从GaSb的顶表面穿过界面进入GaAs衬底，提供关于材料的光学性质作为时间/深度的函数的信息。GaAs带隙附近的振荡的波长依赖性的研究表明强烈的相关性GaAs的光学性质。
We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb across the interface into the GaAs substrate, providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs.