Theoretical study of the recording density limit of a near-field photochromic memory
Theoretical study of the recording density limit of a near-field photochromic memory
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近场光致变色存储器记录密度极限的理论研究
DOI：
10.1364/josab.15.001140
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发表时间：
1998
影响因子：
1.9
通讯作者：
M. Irie
中科院分区：
文献类型：
--
作者：
T. Tsujioka;M. Irie
利用香农信息理论，从理论上研究了光致变色介质近场光存储器的记录密度极限。在信噪比分析中考虑了散粒噪声和材料噪声。评估了由最小记录标记面积的倒数定义的常规记录密度极限和香农记录密度极限。常规记录密度极限为1011-1012比特/厘米~2，香农的记录密度极限为1012-1013比特/厘米~2。
The recording density limit of a near-field optical memory that uses a photochromic medium was theoretically studied by use of Shannon’s information theory. Shot noise and material noise were taken into account in the analysis of the signal-to-noise ratio. The conventional recording density limit, which is defined by the inverse of the minimum recorded mark area, and Shannon’s recording density limit were evaluated. The conventional recording density limit was 1011–1012 bits/cm2, and Shannon’s recording density limit was 1012–1013 bits/cm2.